전자부품 데이터시트 검색엔진 |
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BC547 데이터시트(PDF) 1 Page - Diotec Semiconductor |
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BC547 데이터시트(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page BC546 ... BC549 BC546 ... BC549 NPN General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN Version 2006-05-31 Dimensions - Maße [mm] Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC546 BC547 BC548/549 Collector-Emitter-voltage E-B short VCES 85 V 50 V 30 V Collector-Emitter-voltage B open VCEO 65 V 45 V 30 V Collector-Base-voltage E open VCBO 80 V 50 V 30 V Emitter-Base-voltage C open VEB0 5 V Power dissipation – Verlustleistung Ptot 500 mW 1) Collector current – Kollektorstrom (dc) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Peak Emitter current – Emitter-Spitzenstrom - IEM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Group A Group B Group C DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 5 V, IC = 10 µA hFE typ. 90 typ. 150 typ. 270 VCE = 5 V, IC = 2 mA hFE 110 ... 220 200 ... 450 420 ... 800 VCE = 5 V, IC = 100 mA hFE typ. 120 typ. 200 typ. 400 h-Parameters at/bei VCE = 5 V, IC = 2 mA, f = 1 kHz Small signal current gain Kleinsignal-Stromverstärkung hfe typ. 220 typ. 330 typ. 600 Input impedance – Eingangs-Impedanz hie 1.6 ... 4.5 kΩ 3.2 ...8.5 kΩ 6 ... 15 kΩ Output admittance – Ausgangs-Leitwert hoe 18 < 30 µS 30 < 60 µS 60 < 110 µS Reverser voltage transfer ratio Spannungsrückwirkung hre typ. 1.5*10-4 typ. 2*10-4 typ. 3*10-4 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 2 x 2.54 C BE |
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