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IRFP1405PBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP1405PBF
상세설명  HEXFET짰 Power MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP1405PBF 데이터시트(HTML) 2 Page - International Rectifier

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IRFP1405PbF
2
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S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
∆V
(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.058
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
4.2
5.3
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
77
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
120
180
Qgs
Gate-to-Source Charge
–––
30
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
53
–––
td(on)
Turn-On Delay Time
–––
12
–––
tr
Rise Time
–––
160
–––
td(off)
Turn-Off Delay Time
–––
140
–––
ns
tf
Fall Time
–––
150
–––
LD
Internal Drain Inductance
–––
5.0
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
13
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
5600
–––
Coss
Output Capacitance
–––
1310
–––
Crss
Reverse Transfer Capacitance
–––
350
–––
pF
Coss
Output Capacitance
–––
6550
–––
Coss
Output Capacitance
–––
920
–––
Coss eff.
Effective Output Capacitance
–––
1750
–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
95
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
640
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
70
110
ns
Qrr
Reverse Recovery Charge
–––
170
260
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
VGS = 10V
e
VDD = 28V
ID = 95A
RG = 2.6 Ω
TJ = 25°C, IS = 95A, VGS = 0V e
TJ = 25°C, IF = 95A, VDD = 28V
di/dt = 100A/µs
e
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 95A
e
VDS = VGS, ID = 250µA
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 95A
ID = 95A
VDS = 44V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 20V
VGS = -20V
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by T
Jmax, starting TJ = 25°C, L = 0.12mH
RG = 25Ω, IAS = 95A, VGS =10V. Part not
recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Notes:
„ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
† This value determined from sample failure population. 100%
tested to this value in production.


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