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BZW04-40 데이터시트(PDF) 1 Page - Diotec Semiconductor

부품명 BZW04-40
상세설명  Unidirectional and bidirectional Transient Voltage Suppressor Diodes
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제조업체  DIOTEC [Diotec Semiconductor]
홈페이지  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BZW04-40 데이터시트(HTML) 1 Page - Diotec Semiconductor

  BZW04-40 Datasheet HTML 1Page - Diotec Semiconductor BZW04-40 Datasheet HTML 2Page - Diotec Semiconductor BZW04-40 Datasheet HTML 3Page - Diotec Semiconductor  
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BZW04-5V8 ... BZW04-376B
BZW04-5V8 ... BZW04-376B
Unidirectional and bidirectional Transient Voltage Suppressor Diodes
Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden
Version 2005-07-15
Dimensions - Maße [mm]
Peak pulse power dissipation
Impuls-Verlustleistung
400 W
Nominal Stand-off voltage
Nominale Sperrspannung
5.8...376 V
Plastic case
Kunststoffgehäuse
DO-15
(DO-204AC)
Weight approx
Gewicht ca.
0.4 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
For bidirectional types (add suffix “B”), electrical characteristics apply in both directions.
Für bidirektionale Dioden (ergänze Suffix “B”) gelten die elektrischen Werte in beiden Richtungen.
Maximum ratings and Characteristics
Grenz- und Kennwerte
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
TA = 25°C
PPPM
400 W 1)
Steady state power dissipation
Verlustleistung im Dauerbetrieb
TA = 75°C
P
M(AV)
1 W 2)
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
TA = 25°C
I
FSM
40 A 3)
Max. instantaneous forward voltage
Augenblickswert der Durchlass-Spannung
I
F = 25 A
V
BR ≤ 200 V
V
BR > 200 V
VF
VF
< 3.0 V 3)
< 6.5 V 3)
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 45 K/W
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
RthT
< 15 K/W
1
Non-repetitive pulse see curve I
PP = f (t) / PPP = f (t)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve I
PP = f (t) / PPP = f (t)
2
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
3
Unidirectional diodes only – Nur für unidirektionale Dioden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø
±0.05
0.8
Ø
±0.05
3


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