STG3P3M25N60 datasheet(4/12 Pages) STMICROELECTRONICS

부품명	STG3P3M25N60

상세설명	3 Phase inverter IGBT - SEMITOP짰3 module

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Electrical characteristics

STG3P3M25N60

4/12

2

Electrical characteristics

(Ts=25°C unless otherwise specified)

Table 3.

IGBT-Inverter parameters

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-emitter

breakdown voltage

IC= 1mA, VGE= 0

600

V

ICES

Collector cut-off Current

(VGE = 0)

VCE= Max rating, ts= 25°c

vce=max rating, Ts= 125°C

10

1

µA

mA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±20V , VCE= 0

±100

nA

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250µA

3.75

5.75

V

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15V, IC= 20A

VGE=15V, IC= 20A, Ts=125°C

1.85

1.7

2.5

V

Table 4.

Dynamic

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VCE = 15V, IC= 20A

15

S

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25V, f = 1MHz,

VGE = 0

2200

225

50

pF

Qg

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390V, IC = 20A,

VGE = 15V,

(see Figure 8)

100

16

45

140

nC

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