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MMBTA92 데이터시트(PDF) 1 Page - Diotec Semiconductor |
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MMBTA92 데이터시트(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page MMBTA92 / MMBTA93 MMBTA92 / MMBTA93 PNP Surface mount High Voltage Transistors Hochspannungs-Transistoren für die Oberflächenmontage PNP Version 2005-06-21 Dimensions / Maße [mm] 1 = B 2 = E 3 = C Power dissipation Verlustleistung 250 mW Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMBTA92 MMBTA93 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO 300 V 200 V Collector-Base-voltage - Kollektor-Basis-Spannung E open - VCBO 300 V 200 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5 V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) - IC 500 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -65...+150°C -65…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 200 V IE = 0, - VCB = 160 V MMBTA92 MMBTA93 - ICB0 - ICB0 – – – – 250 nA 250 nA Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 3 V - IEB0 – – 100 nA Collector saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 20 mA, - IB = 2 mA - VCEsat – – 500 mV Base saturation voltage – Basis-Sättigungsspannung 2) - IC = 20 mA, - IB = 2 mA - VBEsat – – 900 mV 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 1.1 2.9 ±0.1 0.4 1 2 3 Type Code 1.9 |
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