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BUZ102SE3045A 데이터시트(PDF) 8 Page - Infineon Technologies AG

부품명 BUZ102SE3045A
상세설명  SIPMOS Power Transistor
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BUZ102SE3045A 데이터시트(HTML) 8 Page - Infineon Technologies AG

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BUZ 102S
Data Book
8
05.99
Typ. gate charge
VGS = f (QGate)
parameter:
ID puls = 52 A
0
10
20
30
40
50
nC
70
QGate
0
2
4
6
8
10
12
V
16
BUZ102S
DS max
V
0,8
DS max
V
0,2
Avalanche Energy
EAS = f (Tj)
parameter:
ID = 52 A, VDD = 25 V
RGS = 25 Ω
20
40
60
80
100
120
140
˚C
180
Tj
0
20
40
60
80
100
120
140
160
180
200
220
mJ
260
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60
-20
20
60
100
140
˚C
200
Tj
50
52
54
56
58
60
62
64
V
66
BUZ102S


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