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IRFP054VPBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP054VPBF
상세설명  HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 9.0m廓 , ID = 93A )
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP054VPBF 데이터시트(HTML) 2 Page - International Rectifier

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IRFP054VPbF
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 90A, VGS = 0V
„‡
trr
Reverse Recovery Time
–––
78
120
ns
TJ = 25°C, IF = 64A
Qrr
Reverse Recovery Charge
–––
250
380
nC
di/dt = 100A/µs
„‡
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
93
ˆ
360
A
‚ Starting TJ = 25°C, L = 54µH
RG = 25Ω, IAS = 90A, VGS=10V (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
ƒ ISD ≤ 90A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ This is tested with same test conditions as the existing data sheet
ˆ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.066 –––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
9.0
m
VGS = 10V, ID = 54A
„‡
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
61
–––
–––
S
VDS = 25V, ID = 54A
„‡
–––
–––
25
µA
VDS = 60V, VGS = 0V
–––
–––
250
VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
170
ID = 64A
Qgs
Gate-to-Source Charge
–––
–––
39
nC
VDS = 48V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
59
VGS = 10V, See Fig. 6 and 13
‡
td(on)
Turn-On Delay Time
–––
22
–––
VDD = 30V
tr
Rise Time
–––
160
–––
ID = 64A
td(off)
Turn-Off Delay Time
–––
77
–––
RG = 6.2Ω
tf
Fall Time
–––
110
–––
VGS = 10V, See Fig. 10
„‡
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
4080 –––
VGS = 0V
Coss
Output Capacitance
–––
840
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
180
–––
pF
ƒ = 1.0MHz, See Fig. 5
‡
EAS
Single Pulse Avalanche Energy
‚
––– 1080
…220† mJ
IAS = 90A, L = 54µH
‡
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current


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