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IRFP140 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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IRFP140 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page ©2002 Fairchild Semiconductor Corporation IRFP140 Rev. B IRFP140 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421. Features • 31A, 100V •rDS(ON) = 0.077Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC STYLE TO-247 Ordering Information PART NUMBER PACKAGE BRAND IRFP140 TO-247 IRFP140 NOTE: When ordering, include the entire part number. G D S SOURCE DRAIN DRAIN (FLANGE) GATE Data Sheet January 2002 NOT RECOMMENDED FOR NEW DESIGNS POSSIBLE SUBSTITUTE PRODUCT IRFP140N |
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