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IRFP140 데이터시트(PDF) 2 Page - Fairchild Semiconductor

부품명 IRFP140
상세설명  31A, 100V, 0.077 Ohm, N-Channel Power MOSFET
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

IRFP140 데이터시트(HTML) 2 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
IRFP140 Rev. B
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRFP140
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
100
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
31
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
22
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
120
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
180
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
100
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 150oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA (Figure 10)
100
-
-
V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
31
-
-
A
Gate to Source Leakage
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
VGS = 10V, ID = 19A (Figures 8, 9)
-
0.055
0.077
Forward Transconductance (Note 2)
gfs
VDS ≥ 50V, ID = 19A (Figure 12)
9.3
14
-
S
Turn-On Delay Time
td(ON)
VDD = 50V, ID ≈ 28A, RGS = 9.1Ω, RL = 1.7Ω,
VGS = 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-15
23
ns
Rise Time
tr
-
72
110
ns
Turn-Off Delay Time
td(OFF)
-40
60
ns
Fall Time
tf
-50
75
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = 10V, ID ≈ 27A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of Operating
Temperature
-38
59
nC
Gate to Source Charge
Qgs
-10
-
nC
Gate to Drain “Miller” Charge
Qgd
-21
-
nC
Input Capacitance
CISS
VGS = 0V, VDS ≈ 25V, f = 1.0MHz (Figure 11)
-
1275
-
pF
Output Capacitance
COSS
-
550
-
pF
Reverse Transfer Capacitance
CRSS
-
160
-
pF
Internal Drain Inductance
LD
Measured between the
Contact Screw on Header
that is Closer to Source
and Gate Pins and Center
of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured from the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
-
12.5
-
nH
Thermal Resistance Junction to Case
RθJC
-
-
0.83
oC/W
Thermal Resistance Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
LS
LD
G
D
S
IRFP140


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