SI7922DN_07 datasheet(2/5 Pages) VISHAY

부품명	SI7922DN

상세설명	Dual N-Channel 100-V (D-S) MOSFET

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Si7922DN

Vishay Siliconix

New Product

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Document Number: 72031

S-21976—Rev. A, 04-Nov-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

2

4

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

VDS = 80 V, VGS = 0 V

1

m

Zero Gate Voltage Drain Current

IDSS

VDS = 80 V, VGS = 0 V, TJ = 85_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

10

A

a

VGS = 10 V, ID = 2.5 A

0.162

0.195

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 6 V, ID = 2.3 A

0.190

0.230

W

Forward Transconductancea

gfs

VDS = 10 V, ID = 2.5 A

5.3

S

Diode Forward Voltagea

VSD

IS = 2.2 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

5.2

8

Gate-Source Charge

Qgs

VDS = 50 V, VGS = 10 V, ID = 2.5 A

1.1

nC

Gate-Drain Charge

Qgd

1.9

Gate Resistance

RG

1.7

W

Turn-On Delay Time

td(on)

7

15

Rise Time

tr

VDD = 50 V, RL = 50 W

11

20

Turn-Off Delay Time

td(off)

VDD = 50 V, RL = 50 W

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

8

15

ns

Fall Time

tf

11

20

Source-Drain Reverse Recovery Time

trr

IF = 2.2 A, di/dt = 100 A/ms

40

80

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

2

4

6

8

10

0123456

0

2

4

6

8

10

0

123

4567

8

VGS = 10 thru 6 V

TC = 125_C

-55

_C

5 V

25

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

4 V

3 V

유사한 부품 번호 - SI7922DN_07

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI7922DN	206Kb / 4P	Dual N-Channel 100-V (D-S) MOSFET Rev. B, 20-Feb-06

More results

유사한 설명 - SI7922DN_07

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SI7922DN 데이터시트(PDF) 2 Page - Vishay Siliconix

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유사한 부품 번호 - SI7922DN_07

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