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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRFB31N20DPBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRFB31N20DPBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRFB/S/SL31N20DPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.25 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.082 Ω VGS = 10V, ID = 18A VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 200V, VGS = 0V ––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 17 ––– ––– S VDS = 50V, ID = 18A Qg Total Gate Charge ––– 70 107 ID = 18A Qgs Gate-to-Source Charge ––– 18 23 nC VDS = 160V Qgd Gate-to-Drain ("Miller") Charge ––– 33 65 VGS = 10V td(on) Turn-On Delay Time ––– 16 ––– VDD = 100V tr Rise Time ––– 38 ––– ID = 18A td(off) Turn-Off Delay Time ––– 26 ––– RG = 2.5Ω tf Fall Time ––– 10 ––– RD = 5.4Ω, Ciss Input Capacitance ––– 2370 ––– VGS = 0V Coss Output Capacitance ––– 390 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 78 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 2860 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 150 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 170 ––– VGS = 0V, VDS = 0V to 160V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 420 mJ IAR Avalanche Current ––– 18 A EAR Repetitive Avalanche Energy ––– 20 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V trr Reverse Recovery Time ––– 200 300 ns TJ = 25°C, IF = 18A Qrr Reverse RecoveryCharge ––– 1.7 2.6 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 31 124 A Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient ––– 40 |
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