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STGW19NC60WD 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STGW19NC60WD
상세설명  N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH??IGBT
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW19NC60WD 데이터시트(HTML) 5 Page - STMicroelectronics

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STGP19NC60WD - STGW19NC60WD
Electrical characteristics
5/15
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 12A
RG= 10Ω, VGE= 15V,
Figure 17
25
7
1600
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 12A
RG= 10Ω, VGE= 15V,
Tj = 125°C
Figure 17
25
8
1400
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390V, IC = 12A
RG= 10Ω, VGE= 15V,
Figure 17
22
90
43
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390V, IC = 12A
RG= 10Ω, VGE= 15V,
Tj = 125°C
Figure 17
47
127
77
ns
ns
ns
Table 6.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
(1)
Eoff
(2)
Ets
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 15 If the IGBT is offered
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 12A
RG= 10Ω, VGE= 15V,
Figure 17
81
125
206
µJ
µJ
µJ
Eon
(1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 12A
RG= 10Ω, VGE= 15V,
Tj = 125°C
Figure 17
161
255
416
µJ
µJ
µJ


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