IRFBA22N50APBF datasheet(8/9 Pages) IRF

부품명	IRFBA22N50APBF

상세설명	HEXFET짰Power MOSFET

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제조업체	IRF [International Rectifier]

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IRFBA22N50APbF

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Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ 23A, di/dt ≤ 123A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Starting T

J = 25°C, L = 3.4mH

RG = 25Ω, IAS = 24A. (See Figure 12)

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS

Notes:

2X

A

123

3X

0.25 [.010]

B

A

B

4X

4

0.25 [

3.00 [.118]

2.50 [.099]

14.50 [.570]

13.00 [.512]

4.00 [.157]

3.50 [.138]

1.30 [.051]

0.90 [.036]

2.55 [.100]

1.00 [.039]

0.70 [.028]

5.00 [.196]

4.00 [.158]

11.00 [.433]

10.00 [.394]

1.50 [.059]

0.50 [.020]

15.00 [.590]

14.00 [.552]

9.00 [.

8.00 [.

13.50 [.

12.50 [.

MOSFET

IGBT

Super-220 ( TO-273AA ) Package Outline

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