BSM35GB120DLC datasheet(1/8 Pages) EUPEC | vorlafige Daten preliminary data

부품명	BSM35GB120DLC

부품 상세설명	vorlafige Daten preliminary data

Download	8 Pages

Scroll/Zoom	100%

제조업체	EUPEC [eupec GmbH]

홈페이지	http://www.eupec.com

Logo

1 / 8 page

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

BSM35GB120DLC

vorläufige Daten

preliminary data

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

VCES

1200

V

Kollektor-Dauergleichstrom

TC = 80 °C

IC,nom.

35

A

DC-collector current

TC = 25 °C

IC

75

A

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

tP = 1 ms, TC = 80°C

ICRM

70

A

Gesamt-Verlustleistung

total power dissipation

TC=25°C, Transistor

Ptot

310

W

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

VGES

+/- 20V

V

Dauergleichstrom

DC forward current

IF

35

A

Periodischer Spitzenstrom

repetitive peak forw. current

tP = 1 ms

IFRM

70

A

Grenzlastintegral der Diode

I

2t - value, Diode

VR = 0V, tp = 10ms, TVj = 125°C

I

2t

400

A

2s

Isolations-Prüfspannung

insulation test voltage

RMS, f = 50 Hz, t = 1 min.

VISOL

2,5

kV

Charakteristische Werte / Characteristic values

Transistor / Transistor

min.

typ.

max.

Kollektor-Emitter Sättigungsspannung

IC = 35A, VGE = 15V, Tvj = 25°C

VCE sat

-

2,1

2,6

V

collector-emitter saturation voltage

IC = 35A, VGE = 15V, Tvj = 125°C

-

2,4

V

Gate-Schwellenspannung

gate threshold voltage

IC = 1,2mA, VCE = VGE, Tvj = 25°C

VGE(th)

4,5

5,5

6,5

V

Gateladung

gate charge

VGE = -15V...+15V

QG

-

0,35

-

µC

Eingangskapazität

input capacitance

f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V

Cies

-2

-

nF

Rückwirkungskapazität

reverse transfer capacitance

f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V

Cres

-

t.b.d.

-

nF

Kollektor-Emitter Reststrom

VCE = 1200V, VGE = 0V, Tvj = 25°C

ICES

-

5

500

µA

collector-emitter cut-off current

VCE = 1200V, VGE = 0V, Tvj = 125°C

-

250

µA

Gate-Emitter Reststrom

gate-emitter leakage current

VCE = 0V, VGE = 20V, Tvj = 25°C

IGES

-

400

nA

prepared by: Mark Münzer

date of publication: 15.5.1999

approved by:

revision: 1

1(8)

Datenblatt_BSM35GB120DLC.xls

유사한 부품 번호 - BSM35GB120DLC

제조업체	부품명	데이터시트	부품 상세설명
Siemens Semiconductor G...	BSM35GB120DN2	110Kb / 9P	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area)
eupec GmbH	BSM35GB120DN2	259Kb / 10P	IGBT Power Module

More results

유사한 설명 - BSM35GB120DLC

제조업체	부품명	데이터시트	부품 상세설명
OSRAM GmbH	LCWJNSH.PC-BRBT-5H7I-1	2Mb / 20P	Vorl채ufige Daten / Preliminary Data
List of Unclassifed Man...	LWW5SG	178Kb / 15P	Vorlaufige Daten Preliminary Data
OSRAM GmbH	LCW_JNSH.PC-203162	2Mb / 21P	Vorl채ufige Daten / Preliminary Data
Infineon Technologies A...	FF6MR12W2M1B70	536Kb / 8P	Vorl채ufige Daten / Preliminary Data datasheet V2.0 2020-05-11
List of Unclassifed Man...	LBW5SG	200Kb / 14P	Vorlaufige Daten Preliminary Data
OSRAM GmbH	LUWJNSH.EC-BRBT-5C8E-1	2Mb / 18P	Vorl채ufige Daten / Preliminary Data
Infineon Technologies A...	FF11MR12W1M1B70	514Kb / 8P	Vorl채ufige Daten / Preliminary Data datasheet V2.0 2020-05-11
OSRAM GmbH	LSGF971	63Kb / 7P	Vorlaufige Daten / Preliminary Data
	LGY870	132Kb / 13P	Vorlaufige Daten / Preliminary Data
	LWV283	521Kb / 15P	White Hyper-Bright LED Vorlaufige Daten / Preliminary Data

More results

BSM35GB120DLC 데이터시트(PDF) 1 Page - eupec GmbH

BSM35GB120DLC 데이터시트(HTML) 1 Page - eupec GmbH

유사한 부품 번호 - BSM35GB120DLC

유사한 설명 - BSM35GB120DLC

Html Pages

1 2 3 4 5 6 7 8

데이터시트 다운로드

링크 URL