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IRFPS40N50LPBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRFPS40N50LPBF 데이터시트(HTML) 2 Page - International Rectifier |
2 / 8 page IRFPS40N50LPbF 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11). Starting T J = 25°C, L = 0.86mH, RG = 25Ω, IAS = 46A. (See Figure 12). I SD ≤ 46A, di/dt ≤ 550A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%.
C oss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff.(ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80% VDSS. Rθ is measured at TJ approximately 90°C Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V ∆V (BR)DSS/ ∆T J Breakdown Voltage Temp. Coefficient ––– 0.60 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 0.087 0.100 Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V IDSS Drain-to-Source Leakage Current ––– ––– 50 µA ––– ––– 2.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 0.90 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 21 ––– ––– S Qg Total Gate Charge ––– ––– 380 Qgs Gate-to-Source Charge ––– ––– 80 nC Qgd Gate-to-Drain ("Miller") Charge ––– ––– 190 td(on) Turn-On Delay Time ––– 27 ––– tr Rise Time ––– 170 ––– ns td(off) Turn-Off Delay Time ––– 50 ––– tf Fall Time ––– 69 ––– Ciss Input Capacitance ––– 8110 ––– Coss Output Capacitance ––– 960 ––– Crss Reverse Transfer Capacitance ––– 130 ––– Coss Output Capacitance ––– 11200 ––– pF VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 240 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 440 ––– Coss eff. (ER) Effective Output Capacitance ––– 310 ––– (Energy Related) Avalanche Characteristics Symbol Parameter Typ. Units EAS Single Pulse Avalanche Energy d ––– mJ IAR Avalanche Current à ––– A EAR Repetitive Avalanche Energy ––– mJ Thermal Resistance Symbol Parameter Typ. Units RθJC Junction-to-Case h ––– RθCS Case-to-Sink, Flat, Greased Surface 0.24 °C/W RθJA Junction-to-Ambient h ––– 40 Max. 0.23 ––– VDS = 25V ƒ = 1.0MHz, See Fig. 5 46 54 Max. 920 VGS = 0V,VDS = 0V to 400V g ID = 46A RG = 0.85 Ω VGS = 10V, See Fig. 14a & 14b f VGS = 0V ID = 46A VDS = 400V VGS = 10V, See Fig. 7 & 15 f VDD = 250V VGS = 30V f = 1MHz, open drain Conditions VDS = 50V, ID = 46A VGS = -30V VDS = VGS, ID = 250µA VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 28A f |
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