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TPIC5403 데이터시트(PDF) 3 Page - Texas Instruments |
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3 / 14 page TPIC5403 4-CHANNEL INDEPENDENT GATE-PROTECTED POWER DMOS ARRAY SLIS038A – SEPTEMBER 1994 – REVISED SEPTEMBER 1995 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)DSX Drain-to-source breakdown voltage ID = 250 µA, VGS = 0 60 V VGS(th) Gate-to-source threshold voltage ID = 1 mA, See Figure 5 VDS = VGS, 1.5 1.75 2.2 V V(BR)GS Gate-to-source breakdown voltage IGS = 250 µA 18 V V(BR)SG Source-to-gate breakdown voltage ISG = 250 µA 9 V V(BR) Reverse drain-to-GND breakdown voltage (across D1, D2, D3, and D4) Drain-to-GND current = 250 µA 100 V VDS(on) Drain-to-source on-state voltage ID = 2.25 A, See Notes 2 and 3 VGS = 10 V, 0.5 0.62 V VF(SD) Forward on-state voltage, source-to-drain IS = 2.25 A, VGS = 0 (Z1, Z2, Z3, Z4), See Notes 2 and 3 and Figure 12 0.9 1.1 V VF Forward on-state voltage, GND-to-drain ID = 2.25 A (D1, D2, D3, D4), See Notes 2 and 3 2.5 V IDSS Zero gate voltage drain current VDS = 48 V, TC = 25°C 0.05 1 µA IDSS Zero-gate-voltage drain current DS , VGS = 0 TC = 125°C 0.5 10 µA IGSSF Forward gate current, drain short circuited to source VGS = 15 V, VDS = 0 20 200 nA IGSSR Reverse gate current, drain short circuited to source VSG = 5 V, VDS = 0 10 100 nA Ilk Leakage current drain to GND VDGND =48V TC = 25°C 0.05 1 µA Ilkg Leakage current, drain-to-GND VDGND = 48 V TC = 125°C 0.5 10 µA rDS( ) Static drain to source on state resistance VGS = 10 V, ID = 2.25 A, TC = 25°C 0.23 0.27 Ω rDS(on) Static drain-to-source on-state resistance D , See Notes 2 and 3 and Figures 6 and 7 TC = 125°C 0.35 0.4 Ω gfs Forward transconductance VDS = 15 V, ID = 1.125 A, See Notes 2 and 3 and Figure 9 1.6 2.1 S Ciss Short-circuit input capacitance, common source 200 250 Coss Short-circuit output capacitance, common source VDS = 25 V, VGS = 0, 100 175 pF Crss Short-circuit reverse-transfer capacitance, common source f = 1 MHz, See Figure 11 60 75 F NOTES: 2. Technique should limit TJ – TC to 10°C maximum. 3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. source-to-drain and GND-to-drain diode characteristics, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT t Reverse recovery time Z1, Z2, Z3, and Z4 80 ns trr Reverse-recovery time IS = 1.125 A, VGS 0 VDS = 48 V, di/dt 100 A/ µs D1, D2, D3, and D4 160 ns QRR Total diode charge VGS = 0, See Figures 1 and 14 di/dt = 100 A/ µs, Z1, Z2, Z3, and Z4 0.12 µC QRR Total diode charge See Figures 1 and 14 D1, D2, D3, and D4 0.5 µC |
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