전자부품 데이터시트 검색엔진 |
|
BTA201W-800E 데이터시트(PDF) 6 Page - NXP Semiconductors |
|
BTA201W-800E 데이터시트(HTML) 6 Page - NXP Semiconductors |
6 / 13 page BTA201W_SER_E_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 17 September 2007 6 of 13 NXP Semiconductors BTA201W series E 1 A Three-quadrant triacs high commutation 6. Static characteristics Table 5. Static characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit BTA201W-600E and BTA201W-800E IGT gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8 T2+ G+ - - 10 mA T2+ G − --10 mA T2 − G− --10 mA IL latching current VD = 12 V; IGT = 0.1 A; see Figure 10 T2+ G+ - - 12 mA T2+ G − --20 mA T2 − G− --12 mA IH holding current VD = 12 V; IGT = 0.1 A; see Figure 11 --12 mA VT on-state voltage IT = 1.4 A; see Figure 9 - 1.2 1.5 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.2 0.3 - V ID off-state current VD =VDRM(max); Tj = 125 °C - 0.1 0.5 mA |
유사한 부품 번호 - BTA201W-800E |
|
유사한 설명 - BTA201W-800E |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |