STP19NF20 datasheet(4/16 Pages) STMICROELECTRONICS

부품명	STP19NF20

상세설명	N-channel 200V - 0.15廓 - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY??Power MOSFET

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Electrical characteristics

STB19NF20 - STF9NF20 - STP19NF20

4/16

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

200

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

1

10

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

±

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

23

4

V

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 7.5A

0.15

0.16

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS =8V, ID = 7.5A

12

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz,

VGS=0

800

165

26

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=160V, ID = 15A

VGS =10V

(see Figure 16)

24

4.4

11.6

nC

유사한 부품 번호 - STP19NF20

제조업체	부품명	데이터시트	상세설명
SHENZHEN DOINGTER SEMIC...	STP19NF20	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
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유사한 부품 번호 - STP19NF20

유사한 설명 - STP19NF20

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