전자부품 데이터시트 검색엔진 |
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TPCF8001 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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TPCF8001 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPCF8001 2007-01-16 4 Drain current ID (A) RDS (ON) – ID Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Drain current ID (A) ⎪Yfs⎪ – ID Common source VDS = 10 V Pulse test 0 0 1 2 3 4 5 4 10 Ta = −55°C 25 100 6 8 2 Common source Ta = 25℃ Pulse test 0 0.3 0.4 0.5 0 ID = 7 A 2 4 6 8 10 1.75 3.5 0.2 0.1 Common source VDS = 10 V Pulse test 0.1 10 100 0.1 1 100 25 100 Ta = −55°C 1 10 Common source Ta = 25°C Pulse test 5 3 2 0 4 1 0 0.2 0.4 0.6 0.8 VGS = 2.5V 2.6 2.8 2.7 3 2.9 4.5 10 1.0 3.5 3.2 Common source Ta = 25°C Pulse test 8 6 4 2 0 10 0 2 5 2.6 2.7 2.8 3.1 10 2.9 3 4 3 1 3.2 VGS = 2.5 V 4.5 3.5 Common source Ta = 25°C Pulse test 1 0.1 1 10 100 10 1000 VGS = 10 V 100 4.5 |
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