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TPCP8F01 데이터시트(PDF) 3 Page - Toshiba Semiconductor

부품명 TPCP8F01
상세설명  TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type
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TPCP8F01 데이터시트(HTML) 3 Page - Toshiba Semiconductor

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TPCP8F01
2006-11-13
3
Electrical Characteristics (Ta = 25°C)
Transistor
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −30 V, IE = 0
−100
nA
Emitter cut-off current
IEBO
VEB = −7 V, IC = 0
−100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = −10 mA, IB = 0
−20
V
hFE (1)
VCE = −2 V, IC = −0.5 A
200
500
DC current gain
hFE (2)
VCE = −2 V, IC = −1.6 A
100
Collector-emitter saturation voltage
VCE (sat)
IC = −1.6 A, IB = −53 mA
−0.19
V
Base-emitter saturation voltage
VBE (sat)
IC = −1.6 A, IB = −53 mA
−1.10
V
Collector Output Capacitance
Cob
VCB = −10 V, IE = 0, f = 1MHz
28
pF
Rise time
tr
70
Storage time
tstg
150
Switching time
Fall time
tf
See Figure 3 circuit diagram
VCC ∼− −12 V, RL = 7.5 Ω
−IB1 = IB2 = −53 mA
40
ns
Figure 3. Switching Time Test Circuit & Timing Chart
MOS FET
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = −10 V, VDS = 0
±1
μ
A
Drain-source breakdown voltage
V (BR) DSS
ID = 0.1 mA, VGS = 0
20
V
Drain cut-off current
IDSS
VDS = 20 V, VGS = 0
1
μ
A
Gate Threshold voltage
Vth
VDS = 3 V, ID = 0.1 mA
0.6
1.1
V
Forward Transfer Admittance
|Yfs|
VDS = 3 V, ID = 10 mA
40
mS
ID = 10 mA, VGS = 4.0 V
1.5
3
ID = 10 mA, VGS = 2.5 V
2.2
4
Drain-source ON resistance
RDS(ON)
ID = 1 mA, VGS = 1.5 V
5.2
15
Ω
Input capacitance
Ciss
9.3
Reverse transfer capacitance
Crss
4.5
Output capacitance
Coss
VDS = 3 V, VGS = 0, f = 1 MHz
9.8
pF
Turn-on time
ton
70
Switching time
Turn-off time
toff
VDD ∼− −3 V, RL = 300 Ω
VGS = 0 to 2.5V
125
ns
Figure 4. Switching Time Test Circuit & Timing Chart
Precautions
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100μA for
this product. For normal switching operation, VGS(ON) requires higher voltage than Vth snd VGS(OFF) requires
lower voltage than Vth. (relationship can be established as follows: VGS(OFF) < Vth < VGS(ON))
Please take this into consideration for using the device.
VGS recommended voltage of 2.5V or higher to turn on this product.
I
B1
20us
I
B2
IB1
IB2
Vin
Vout
RL
VCC
Duty Cycle<1%
Rg
Vout
RL
VDD
Vin
10us
2.5V
0
Gate Pulse Width 10us, tr,tf<5ns
(Zout=50ohm),Common Source,Ta=25°C
Duty Cycle<1%


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