TPCP8003-H datasheet(2/7 Pages) TOSHIBA

부품명	TPCP8003-H

상세설명	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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2 / 7 page

TPCP8003-H

2007-06-22

2

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to ambient

(t

= 5 s)

(Note 2a)

Rth (ch-a)

74.4

°C/W

Thermal resistance, channel to ambient

(t

= 5 s)

(Note 2b)

Rth (ch-a)

148.8

°C/W

Note 1: The channel temperature should not exceed 150°C during use.

Note 2: (a) Device mounted on a glass-epoxy board (a)

(b) Device mounted on a glass-epoxy board (b)

Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1 mH, RG = 1 Ω, IAR = 2.2A

Note 4: Repetitive rating: pulse width limited by max channel temperature

Note 5:

(a)

FR-4

25.4

× 25.4 × 0.8

(Unit: mm)

(b)

FR-4

25.4

× 25.4 × 0.8

(Unit: mm)

* Weekly code: (Three digits)

Week of manufacture

(01 for first week of the year, continuing up to 52 or 53)

Year of manufacture

(The last digit of the calendar year)

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