TPCP8401 datasheet(3/10 Pages) TOSHIBA

부품명	TPCP8401

상세설명	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS ??/ ?-MOS ??

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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3 / 10 page

TPCP8401

2006-11-13

3

Electrical Characteristics (Ta = 25°C)

P-ch

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±8 V, VDS = 0 V

⎯

±10

μA

Drain cut-off current

IDSS

VDS = −12 V, VGS = 0 V

⎯

−10

μA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−12

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = 20 V

−4

⎯

V

Gate threshold voltage

Vth

VDS = −10 V, ID = −200 μA

−0.5

⎯

−1.2

V

VGS = −1.8 V, ID = −1.4 A

⎯

66

103

VGS = −2.5 V, ID = −2.8 A

⎯

44

58

Drain-source ON resistance

RDS (ON)

VGS = −4.5 V, ID = −2.8 A

31

38

m

Ω

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −2.8 A

6.5

13

⎯

S

Input capacitance

Ciss

⎯

1520

⎯

Reverse transfer capacitance

Crss

⎯

330

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

380

⎯

pF

Rise time

tr

⎯

9.5

⎯

Turn-on time

ton

⎯

16

⎯

Fall time

tf

⎯

28

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 μs

⎯

74

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

20

⎯

Gate-source charge 1

Qgs1

⎯

15

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− −10 V, VGS = −5 V,

ID = −5.5 A

⎯

5

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current (pulse) (Note 1)

IDRP

⎯

−22

A

Forward voltage (diode)

VDSF

IDR = −5.5 A, VGS = 0 V

⎯

1.2

V

VDD ∼− −6 V



−5 V

VGS

0 V

ID = −2.8 A

VOUT

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