TPCS8211 datasheet(4/7 Pages) TOSHIBA

부품명	TPCS8211

상세설명	Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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4 / 7 page

TPCS8211

2007-01-16

4

ID – VDS

ID – VGS

VDS – VGS

|Yfs| – ID

RDS (ON) – ID

Drain-source voltage VDS (V)

Gate-source voltage VGS (V)

Drain current ID (A)

0

VGS = 1.4 V

1.5

2

4, 5

0

123

4

5

2

4

6

8

10

1.8

Common source

Ta

= 25°C

Pulse test

1.7

1.6

0

VGS = 1.4 V

1.5

1.6

1.7

2

0

0.4

0.8

1.2

1.6

2.0

1

2

3

4

5

Common source

Ta

= 25°C

Pulse test

4, 5

0

1

2

3

4

5

2

4

6

8

10

Ta

= −55°C

100

25

Common source

VDS = 10 V

Pulse test

0

2

4

6

8

10

0.2

0.4

0.8

6

ID = 12 A

0.6

Common source

Ta

= 25°C

Pulse test

1.5

3

1

0.1

1

10

100

Ta

= −55°C

25

100

Common source

VDS = 10 V

Pulse test

1

0.1

1

10

100

VGS = 4 V

Common source

Ta

= 25°C

Pulse test

2.5

2

유사한 부품 번호 - TPCS8211

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	TPCS8211	224Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

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TPCS8211 데이터시트(PDF) 4 Page - Toshiba Semiconductor

TPCS8211 데이터시트(HTML) 4 Page - Toshiba Semiconductor

유사한 부품 번호 - TPCS8211

유사한 설명 - TPCS8211

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