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TPCS8211 데이터시트(PDF) 5 Page - Toshiba Semiconductor

부품명 TPCS8211
상세설명  Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCS8211 데이터시트(HTML) 5 Page - Toshiba Semiconductor

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TPCS8211
2007-01-16
5
RDS (ON) – Ta
IDR – VDS
Capacitance – VDS
Vth – Ta
PD – Ta
Dynamic input/output characteristics
Ambient temperature Ta (°C)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Total gate charge Qg (nC)
0
0.4
0.8
1.2
1.6
−80
−40
0
40
80
120
160
Common source
VDS = 10 V
ID = 200 μA
Pulse test
0.1
1
10
Ciss
Coss
Crss
100
10
100
1000
10000
Common source
Ta
= 25°C
VGS = 0 V
f
= 1 MHz
0
8
24
32
16
0
2
4
6
8
10
0
4
8
12
16
20
Common source
ID = 6 A
Ta
= 25°C
Pulse test
VDD = 16 V
VDS
VGS
0
0
0.2
0.4
0.6
0.8
1
1.2
50
100
200
150
(1)
(4)
(3)
(2)
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t
= 10 s
1
0
0.2
0.4
0.6
0.8
1.0
1.2
10
VGS = −1 V
1
Common source
Ta
= 25°C
Pulse test
3
0
10
5
3
5
−80
−40
0
40
120
160
80
Common source
Pulse test
ID = 1.5, 3, 6 A
VGS = 2 V
VGS = 2.5 V
VGS = 4 V
60
50
40
30
20
10
0


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