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TPCS8211 데이터시트(PDF) 5 Page - Toshiba Semiconductor |
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TPCS8211 데이터시트(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPCS8211 2007-01-16 5 RDS (ON) – Ta IDR – VDS Capacitance – VDS Vth – Ta PD – Ta Dynamic input/output characteristics Ambient temperature Ta (°C) Drain-source voltage VDS (V) Drain-source voltage VDS (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Total gate charge Qg (nC) 0 0.4 0.8 1.2 1.6 −80 −40 0 40 80 120 160 Common source VDS = 10 V ID = 200 μA Pulse test 0.1 1 10 Ciss Coss Crss 100 10 100 1000 10000 Common source Ta = 25°C VGS = 0 V f = 1 MHz 0 8 24 32 16 0 2 4 6 8 10 0 4 8 12 16 20 Common source ID = 6 A Ta = 25°C Pulse test VDD = 16 V VDS VGS 0 0 0.2 0.4 0.6 0.8 1 1.2 50 100 200 150 (1) (4) (3) (2) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s 1 0 0.2 0.4 0.6 0.8 1.0 1.2 10 VGS = −1 V 1 Common source Ta = 25°C Pulse test 3 0 10 5 3 5 −80 −40 0 40 120 160 80 Common source Pulse test ID = 1.5, 3, 6 A VGS = 2 V VGS = 2.5 V VGS = 4 V 60 50 40 30 20 10 0 |
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