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TPD1018F 데이터시트(PDF) 3 Page - Toshiba Semiconductor

부품명 TPD1018F
상세설명  High-side Power Switch for Motors, Solenoids, and Lamp Drivers
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD1018F 데이터시트(HTML) 3 Page - Toshiba Semiconductor

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TPD1018F
2006-10-31
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source Voltage
VDS
60
V
DC
VDD (1)
25
V
Supply Voltage
Pulse
VDD (2)
60 (Rs = 1Ω, τ = 250ms)
V
DC
VIN (1)
-0.5~25
V
Input Voltage
Pulse
VIN (2)
VDD (1) + 1.5 (t = 100ms)
V
Output Current
IO
0.5
A
Input Current
IIN
±10
mA
Power Dissipation
PD
300
mW
Operating Temperature
Topr
-40~125
°C
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Tj = -40~125°C)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Operating Supply Voltage
VDD (opr)
5
12
25
V
IDD (1)
VDD = 13.2V, VIN = 0V,
Tj = 85°C
120
300
μA
Supply Current
IDD (2)
VDD = 13.2V, VIN = 5V
1
1.5
mA
VIH
VDD = 13.2V, IO = 300mA
3.5
V
Input Voltage
VIL
VDD = 13.2V, IO = 100μA
1.5
V
IIN (1)
VDD = 13.2V, VIN = 5V
10
100
μA
Input Current
IIN (2)
VDD = 13.2V, VIN = 0V
-0.2
0.2
μA
On-voltage
VDS (ON)
VDD = 13.2V, IO = 300mA,
Tj = 25°C
0.21
0.24
V
RDS (ON)(1)
VDD = 13.2V, IO = 300mA,
Tj = 25°C
0.7
0.8
On-resistance
RDS (ON)(2)
VDD = 13.2V, IO = 300mA,
Tj = -40~85°C
1.2
Diagnosis Output
Voltage
“L” Level
VDL
VDD = 13.2V, IDL = 1mA
0.4
V
Diagnosis Output
Current
“H” Level
IDH
VDD = 25V, IDH = 25V
10
μA
Output Leakage Current
IOL
VDD = 25V, VIN = 0V
100
μA
Overcurrent Protection
IS
VDD = 13.2V, Tj = 25°C
0.5
3
A
Temperature
TS
150
160
200
°C
Thermal Shutdown
Hysteresis
ΔTS
20
50
°C
Voltage
VDDS
25
V
Overvoltage
Protection
Hysteresis
ΔVDDS
2
7
V
tON
50
μs
Switching Time
tOFF
1
VDD = 13.2V, RL = 40Ω
Tj = 25°C
10
μs


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