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S29GL032M10BCIR20 데이터시트(HTML) 100 Page - SPANSION

부품명 S29GL032M10BCIR20
상세내용  3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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제조사  SPANSION [SPANSION]
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S29GL032M10BCIR20 데이터시트(HTML) 100 Page - SPANSION

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S29GLxxxM MirrorBitTM Flash Family
S29GLxxxM_00A5 April 30, 2004
Pr e l i m i n a r y
Table 29. Device Geometry Definition
Addresses
(x16)
Addresses
(x8)
Data
Description
27h
4Eh
0019h
0018h
0017h
0016h
Device Size = 2N byte
19 = 256 Mb, 18 = 128 Mb, 17 = 64 Mb, 16 = 32 Mb
28h
29h
50h
52h
000xh
0000h
Flash Device Interface description (refer to CFI publication 100)
0000h = x8-only bus devices
0001h = x16-only bus devices
0002h = x8/x16 bus devices
2Ah
2Bh
54h
56h
0005h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0001h
0002h
Number of Erase Block Regions within device (01h = uniform device,
02h = boot device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
00xxh
000xh
00x0h
000xh
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
003Fh, 0000h, 0001h = 32 Mb (-R0, -R3, -R4)
007Fh, 0000h, 0020h, 0000h = 32 Mb (-R1, -R2), 64 Mb (-R1, -R2)
007Fh, 0000h, 0000h, 0001h = 64 Mb (-R0, -R3, -R4, -R5, -R6, -R7)
00FFh, 0000h, 0000h, 0001h = 128 Mb
00FFh, 0001h, 0000h, 0001h = 256 Mb
31h
32h
33h
34h
60h
64h
66h
68h
00xxh
0000h
0000h
000xh
Erase Block Region 2 Information (refer to CFI publication 100)
003Eh, 0000h, 0000h, 0001h = 32 Mb (-R1, -R2)
007Eh, 0000h, 0000h, 0001h = 64 Mb (-R1, -R2)
0000h, 0000h, 0000h, 0000h = all others
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)


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