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전자부품 데이터시트 검색엔진 |
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1SS181 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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1SS181 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page ![]() 1SS181 2007-11-01 1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (Typ.) Fast reverse recovery time: trr = 1.6ns (Typ.) Small total capacitance : CT = 2.2pF (Typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA Surge current (10ms) IFSM 2 (*) A Power dissipation P 150 mW Junction temperature Tj 125 °C Storage temperature Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = Unit rating × 1.5. Electrical Characteristics Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit VF (1) ― IF = 1mA ― 0.61 ― VF (2) ― IF = 10mA ― 0.74 ― Forward voltage VF (3) ― IF = 100mAs ― 0.92 1.20 V IR (1) ― VR = 30V ― ― 0.1 Reverse current IR (2) ― VR = 80V ― ― 0.5 μA Total capacitance CT ― VR = 0, f = 1MHz ― 2.2 4.0 pF Reverse recovery time trr ― IF = 10mA (Fig.1) ― 1.6 4.0 ns Marking Unit: mm JEDEC TO-236MOD EIAJ SC-59 TOSHIBA 1-3G1E Weight: 0.012g |
유사한 부품 번호 - 1SS181_07 |
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유사한 설명 - 1SS181_07 |
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