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FX50KMJ-06 데이터시트(PDF) 2 Page - Powerex Power Semiconductors

부품명 FX50KMJ-06
부품 상세설명  Pch POWER MOSFET HIGH-SPEED SWITCHING USE
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제조업체  POWEREX [Powerex Power Semiconductors]
홈페이지  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

FX50KMJ-06 데이터시트(HTML) 2 Page - Powerex Power Semiconductors

  FX50KMJ-06 Datasheet HTML 1Page - Powerex Power Semiconductors FX50KMJ-06 Datasheet HTML 2Page - Powerex Power Semiconductors FX50KMJ-06 Datasheet HTML 3Page - Powerex Power Semiconductors FX50KMJ-06 Datasheet HTML 4Page - Powerex Power Semiconductors  
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PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
Jan.1999
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
–60
–1.3
–1.8
15.0
23
–0.38
49
11610
1355
687
73
137
822
320
–1.0
70
±0.1
–0.1
–2.3
18.9
32
–0.47
–1.5
3.57
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
PERFORMANCE CURVES
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –60V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –25A, VGS = –10V
ID = –25A, VGS = –4V
ID = –25A, VGS = –10V
ID = –25A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –30V, ID = –25A, VGS = –10V, RGEN = RGS = 50
IS = –25A, VGS = 0V
Channel to case
IS = –50A, dis/dt = 100A/
µs
0
10
20
30
40
50
0
200
50
100
150
0
–20
40
60
80
100
0
1.0
2.0
3.0
4.0
5.0
PD = 35W
VGS =
–10V
Tc = 25°C
Pulse Test
–6V
–3V
–4V
–5V
–8V
0
10
–20
–30
–40
–50
0
–0.4
–0.8
–1.2
–1.6
–2.0
–6V
–5V
–4V
–3V
–8V
–10V
VGS =
Tc = 25°C
Pulse Test
–100
–3
–5
–7
–101
–2
–3
–5
–7
–100 –2
–101
–3 –5 –7
–2
–102
–3 –5 –7
–2
–3
–102
–2
–3
–5
–7
–2 –3 –5 –7
–2
tw =
TC = 25°C
Single Pulse
100
µs
10ms
100ms
1ms
DC
10
µs
PD = 35W
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX50KMJ-06
HIGH-SPEED SWITCHING USE


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관련 부품명

부품명부품 상세설명Html View제조업체
FX3ASJ-3 Pch POWER MOSFET HIGH-SPEED SWITCHING USE 1  2  3  4  Powerex Power Semiconductors
FX50KMJ-03 Pch POWER MOSFET HIGH-SPEED SWITCHING USE 1  2  3  4  Powerex Power Semiconductors
FX20ASJ-03 Pch POWER MOSFET HIGH-SPEED SWITCHING USE 1  2  3  4  Powerex Power Semiconductors
FX50KMJ-2 Pch POWER MOSFET HIGH-SPEED SWITCHING USE 1  2  3  4  Powerex Power Semiconductors
FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET 1  2  3  4  5  More Renesas Technology Corp
FX20ASJ-06 Pch POWER MOSFET HIGH-SPEED SWITCHING USE 1  2  3  4  Powerex Power Semiconductors
FX50SMJ-03 Pch POWER MOSFET HIGH-SPEED SWITCHING USE 1  2  3  4  Powerex Power Semiconductors
FX20ASJ-2 Pch POWER MOSFET HIGH-SPEED SWITCHING USE 1  2  3  4  Powerex Power Semiconductors
FX50SMJ-06 Pch POWER MOSFET HIGH-SPEED SWITCHING USE 1  2  3  4  Powerex Power Semiconductors
FX20KMJ-03 Pch POWER MOSFET HIGH-SPEED SWITCHING USE 1  2  3  4  Powerex Power Semiconductors

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