2SC4214

2007-11-01

1

TOSHIBA Transistor Silicon NPN Planar Type

2SC4214

UHF TV Tuner RF Amplifier Applications

• Low noise figure: NF = 2.8dB (typ.)

• Excellent forward AGC characteristics

Characteristics

Symbol

Rating

Unit

Collector-base voltage

25

V

Collector-emitter voltage

20

V

Emitter-base voltage

2

V

Base current

4

mA

Collector current

20

mA

Collector power dissipation

150

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

0.1

μA

Emitter cut-off current

⎯

⎯

1

μA

Collector-emitter breakdown voltage

20

⎯

⎯

V

DC current gain

40

100

⎯

Transition frequency

500

850

⎯

MHz

Reverse transfer capacitance

⎯

0.3

0.5

pF

Power gain

10

15

⎯

dB

Noise figure

NF

f

= 800 MHz (Figure 1)

⎯

2.8

4.5

dB

AGC voltage

f

= 800 MHz

(Note)

2.5

3.2

4.0

V

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3J1B

Weight: 0.013 g (typ.)