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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SC5459 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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2SC5459 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page  2SC5459 2007-04-26 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 480 V, IE = 0 ― ― 100 μA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 10 μA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 600 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 400 ― ― V hFE (1) VCE = 5 V, IC = 1 mA 13 ― ― DC current gain hFE (2) VCE = 5 V, IC = 0.3 A 20 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1.2 A, IB = 0.15 A ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 1.2 A, IB = 0.15 A ― ― 1.3 V Turn-on time tr ― ― 0.5 Storage time tstg ― ― 2.0 Switching time Fall time tf IB1 = 0.15 A, IB2 = −0.3 A, duty cycle ≤ 1% ― ― 0.3 μs Marking IB21 IB1 VCC ≈ 360 V Output Input 20 μs Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. C5459 Part No. (or abbreviation code) |
유사한 부품 번호 - 2SC5459_07 |
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유사한 설명 - 2SC5459_07 |
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