2SJ200

2006-11-16

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ200

High Power Amplifier Application

High breakdown voltage

High forward transfer admittance

Complementary to 2SK1529

Characteristics

Symbol

Rating

Unit

Drain−source voltage

−180

V

Gate−source voltage

±20

V

Drain current

(Note 1)

−10

A

Drain power dissipation (Tc = 25°C)

120

W

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Unit: mm

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

JEDEC

―

JEITA

―

TOSHIBA

2-16C1B

Weight: 4.6 g (typ.)