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2SJ440 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 2SJ440
상세설명  Audio Frequency Power Amplifier Application
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ440 데이터시트(HTML) 1 Page - Toshiba Semiconductor

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2SJ440
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ440
Audio Frequency Power Amplifier Application
• High breakdown voltage: VDSS = −180 V
• High forward transfer admittance: |Yfs| = 4.0 S (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−180
V
Gate-source voltage
VGSS
±20
V
Drain current
(Note 1)
ID
−9
A
Power dissipation (Tc = 25°C)
PD
80
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)


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