2SD1140 datasheet(2/5 Pages) TOSHIBA

부품명	2SD1140

상세설명	Silicon NPN Epitaxial Type (PCT Process) (Darlington Power Transistor)

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SD1140

2006-11-21

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 30 V, IE = 0

―

10

μA

Emitter cut-off current

IEBO

VEB = 10 V, IC = 0

―

10

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

30

―

V

DC current gain

hFE

VCE = 2 V, IC = 150 mA

4000

―

Collector-emitter saturation voltage

VCE (sat)

IC = 1 A, IB = 1 mA

―

1.5

V

Base-emitter saturation voltage

VBE (sat)

IC = 1 A, IB = 1 mA

―

2.2

V

Turn-on time

ton

―

0.2

―

Storage time

tstg

―

0.6

―

Switching time

Fall time

tf

IB1 = −IB2 = 1 mA, duty cycle ≤ 1%

―

0.3

―

μs

Marking

D1140

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

20 μs

Input

VCC = 15 V

Output

유사한 부품 번호 - 2SD1140

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	2SD1140	195Kb / 4P	NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)
	2SD1140	148Kb / 5P	Micro Motor Drive, Hammer Drive Applications
	2SD1140	148Kb / 5P	Micro Motor Drive, Hammer Drive Applications

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2SD1140 데이터시트(PDF) 2 Page - Toshiba Semiconductor

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유사한 부품 번호 - 2SD1140

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