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2SK1529 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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2SK1529 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SK1529 2006-11-20 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S (typ.) Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 180 V Gate−source voltage VGSS ±20 V Drain current (Note 1) ID 10 A Drain power dissipation (Tc = 25°C) PD 120 W Channel temperature Tc 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain cut−off current IDSS VDS = 180 V, VGS = 0 — — 1.0 mA Gate leakage current IGSS VDS = 0, VGS = ±20 V — — ±0.5 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 180 — — V Drain−source saturation voltage VDS (ON) ID = 6 A, VGS = 10 V — 2.5 5.0 V Gate−source cut−off voltage (Note 2) VGS (OFF) VDS = 10 V, ID = 0.1 A 0.8 — 2.8 V Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A — 4.0 — S Input capacitance Ciss VDS = 30 V, VGS = 0, f = 1 MHz — 700 — Output capacitance Coss VDS = 30 V, VGS = 0, f = 1 MHz — 150 — Reverse transfer capacitance Crss VDD = 30 V, VGS = 0, f = 1 MHz — 90 — pF Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VGS (OFF) Classification 0: 0.8~1.6 Y: 1.4~2.8 This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) K1529 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
유사한 부품 번호 - 2SK1529_06 |
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유사한 설명 - 2SK1529_06 |
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