전자부품 데이터시트 검색엔진 |
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2SK2009 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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2SK2009 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SK2009 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 ⎯ ⎯ ±0.1 μA Drain-source breakdown voltage V (BR) DSS ID = 1 mA, VGS = 0 30 ⎯ ⎯ V Drain cut-off current IDSS VDS = 30 V, VGS = 0 ⎯ ⎯ 10 μA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.5 ⎯ 1.5 V Forward transfer admittance ⎪Yfs⎪ VDS = 3 V, ID = 50 mA 100 ⎯ ⎯ mS Drain-source ON resistance RDS (ON) ID = 50 mA, VGS = 2.5 V ⎯ 1.2 2 Ω Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 70 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 23 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 58 ⎯ pF Turn-on time ton VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⎯ 0.06 ⎯ Switching time Turn-off time toff VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⎯ 0.12 ⎯ μs Switching Time Test Circuit |
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