2SK2399

2006-11-20

1

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L

2

−π−MOSV)

2SK2399

Chopper Regulator, DC/DC Converter and Motor Drive

Applications

4 V gate drive

Low drain−source ON-resistance

High forward transfer admittance

Enhancement mode

Characteristic

Symbol

Rating

Unit

Drain−source voltage

100

V

100

V

Gate−source voltage

±20

V

DC (Note 1)

5

A

Drain current

Pulse (Note 1)

20

A

Drain power dissipation (Tc = 25°C)

20

W

Single-pulse avalanche energy

(Note 2)

180

mJ

Avalanche current

5

A

Repetitive avalanche energy (Note 3)

2

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

6.25

°C / W

Thermal resistance, channel to

ambient

125

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

JEDEC

―

JEITA

SC-64

TOSHIBA

2-7B1B

Weight: 0.36 g (typ.)

JEDEC

―

JEITA

―

TOSHIBA

2-7J1B

Weight: 0.36 g (typ.)