전자부품 데이터시트 검색엔진 |
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2SJ619 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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2SJ619 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SJ619 2006-11-16 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS VDS = −100 V, VGS = 0 V ⎯ ⎯ −100 μA Drain-source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 V −100 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V VGS = −4 V, ID = −6 A ⎯ 0.25 0.32 Drain-source ON resistance RDS (ON) VGS = −10 V, ID = −6 A 0.15 0.21 Ω Forward transfer admittance ⎪Yfs⎪ VDS = −10 V, ID = −6 A 4.5 7.7 ⎯ S Input capacitance Ciss ⎯ 1100 ⎯ Reverse transfer capacitance Crss ⎯ 210 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 440 ⎯ pF Rise time tr ⎯ 18 ⎯ Turn-ON time ton ⎯ 30 ⎯ Fall time tf ⎯ 18 ⎯ Switching time Turn-OFF time toff ⎯ 65 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 48 ⎯ Gate-source charge Qgs ⎯ 29 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− −80 V, VGS = −10 V, ID = −16 A ⎯ 19 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ −16 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ −64 A Forward voltage (diode) VDSF IDR = −16 A, VGS = 0 V ⎯ ⎯ 1.7 V Reverse recovery time trr ⎯ 160 ⎯ μs Reverse recovery charge Qrr IDR = −16 A, VGS = 0 V, dIDR/dt = 50 A/μs ⎯ 0.5 ⎯ μC Marking Duty <= 1%, tw = 10 μs −10 V 0 V VGS RL = 6.25 Ω VDD ∼− −50 V ID = −8 A VOUT J619 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
유사한 부품 번호 - 2SJ619_06 |
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유사한 설명 - 2SJ619_06 |
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