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2SK2614 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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2SK2614 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK2614 2006-11-17 4 Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Ambient temperature Ta (°C) Vth – Tc Ambient temperature Ta (°C) PD – Ta Total gate charge Qg (nC) Dynamic input / output characteristics Ambient temperature Ta (°C) RDS (ON) – Ta −80 160 80 −40 40 0 120 Common source VDS = 10 V ID = 1 mA Pulse test 1.2 0 0.4 0.8 1.6 2.0 0 −80 160 40 −40 80 120 Common source Pulse test ID = 12 A VGS = 4 V VGS = 10 V 0 0.04 0.08 0.12 0.16 0.20 6 12 ID = 25 A 6 1 0 Common source Tc = 25°C Pulse test 1 10 30 50 100 VGS = 0, −1 V 3 5 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 3 5 10 0 20 80 10 30 40 40 120 160 50 200 0 0 0 20 50 50 20 10 30 40 10 30 40 VDS VGS 20 VDD = 40 V 0 8 20 4 12 16 Common source ID = 20 A Ta = 25°C Pulse test 10 30 0.1 100 10 0.3 3 100 300 3000 1 30 1000 5000 50 500 Common source VGS = 0 V f = 1 MHz Ta = 25°C Crss Coss Ciss 10 |
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