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2SK2661 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 2SK2661
상세설명  Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK2661 데이터시트(HTML) 2 Page - Toshiba Semiconductor

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2SK2661
2006-11-02
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate–source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut–off current
IDSS
VDS = 500 V, VGS = 0 V
100
μA
Drain–source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain–source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
1.35
1.50
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.5
4.0
S
Input capacitance
Ciss
780
Reverse transfer capacitance
Crss
60
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
200
pF
Rise time
tr
12
Turn–on time
ton
25
Fall time
tf
15
Switching time
Turn–off time
toff
60
ns
Total gate charge (gate–source
plus gate–drain)
Qg
17
Gate–source charge
Qgs
11
Gate–drain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 5 A
6
nC
Source–Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
1400
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR / dt = 100 A / μs
9
μC
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2661
Part No. (or abbreviation code)


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