1SV215

2007-11-01

1

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1SV215

CATV Tuning

• Excellent C-V characteristics, and small tracking error.

• Useful for small size tuner.

Characteristics

Symbol

Rating

Unit

Reverse voltage

30

V

Peak reverse voltage

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

30

⎯

⎯

V

Reverse current

⎯

⎯

10

nA

Capacitance

26

⎯

32

pF

Capacitance

2.5

⎯

3.2

pF

Capacitance ratio

⎯

9.5

10.5

⎯

⎯

Series resistance

⎯

0.6

0.8

Ω

Note 1: Available in matched group for capacitance to 2.5%.

(min)

C

(min)

C

(max)

C

−

<= 0.025

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

1-1E1A

Weight: 0.004 g (typ.)