TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
TV VHF Wide Band Tuning
• High capacitance ratio: C1 V/C28 V = 14.5 (typ.)
• Low series resistance: rs = 0.65 Ω (typ.)
• Excellent C-V characteristics, and small tracking error.
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Peak reverse voltage
35 (RL = 10 kΩ)V
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
Electrical Characteristics (Ta = 25°C)
IR = 1 μA
VR = 28 V
VR = 1 V, f = 1 MHz
VR = 28 V, f = 1 MHz
C1 V/C28 V
VR = 5 V, f = 470 MHz
Note 1: Characteristic between anode 1 and anode 2
Note 2: The manufactured devices are divided into groups so that the capacitance variation in each group is kept
below 2.5% in the VR range from 1 V to 28 V.
<= 0.025 (VR = 1~28 V)
Note 3: Packing
Devices in each group occupy adjacent cavities of the embossed tape. The number of devices in each
group is a multiple of 12 (except for TPH6/TPH6R and TPH7/TPHR7).
Weight: 0.013 g (typ.)