1SV242

2007-11-01

1

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1SV242

TV VHF Wide Band Tuning

• High capacitance ratio: C1 V/C28 V = 14.5 (typ.)

• Excellent C-V characteristics, and small tracking error.

• Small package

Characteristics

Symbol

Rating

Unit

Reverse voltage

30

V

Peak reverse voltage

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

30

⎯

⎯

V

Reverse current

⎯

⎯

10

nA

Capacitance

C1 V

(Note 1)

36

39

42

pF

Capacitance

C28 V

(Note 1)

2.43

2.7

3.0

pF

Capacitance ratio

C1 V/C28 V

⎯

(Note 1)

13.4

14.5

⎯

⎯

Series resistance

(Note 1)

⎯

0.65

0.8

Ω

Note 1: Characteristic between anode 1 and anode 2

Note 2: The manufactured devices are divided into groups so that the capacitance variation in each group is kept

below 2.5% in the VR range from 1 V to 28 V.

(min)

C

(min)

C

(max)

C

−

<= 0.025 (VR = 1~28 V)

Note 3: Packing

Devices in each group occupy adjacent cavities of the embossed tape. The number of devices in each

group is a multiple of 12 (except for TPH6/TPH6R and TPH7/TPHR7).

Marking

Unit: mm

JEDEC

―

JEITA

SC-59

TOSHIBA

1-3G1F

Weight: 0.013 g (typ.)