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2SK3129 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 2SK3129
상세설명  Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3129 데이터시트(HTML) 2 Page - Toshiba Semiconductor

  2SK3129_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SK3129_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SK3129_06 Datasheet HTML 3Page - Toshiba Semiconductor  
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2SK3129
2006-11-17
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
50
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 30 A
5.5
7
mΩ
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 30 A
40
70
S
Input capacitance
Ciss
3700
pF
Reverse transfer capacitance
Crss
650
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1800
pF
Rise time
tr
20
Turn-on time
ton
35
Fall time
tf
160
Switching time
Turn-off time
toff
Duty ≤ 1%, tw = 10 μs
480
ns
Total gate charge (gate-source plus
gate-drain)
Qg
135
nC
Gate-source charge
Qgs
90
nC
Gate-drain (“miller”) charge
Qgd
VDD ≈ 40 V, VGS = 10 V, ID = 60 A
45
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
60
A
Pulse drain reverse current
(Note 1)
IDRP
240
A
Forward voltage (diode)
VDSF
IDR = 60 A, VGS = 0 V
−1.4
V
Reverse recovery time
trr
180
ns
Reverse recovery charge
Qrr
IDR = 60 A, VGS = 0 V
dIDR/dt = 50 A/μs
0.32
μC
Marking
0 V
10 V
VGS
VDD ≈ 25 V
ID = 30 A
VOUT
K3129
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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