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2SK3399 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 2SK3399
상세설명  Silicon N Channel MOS Type Switching Regulator Applications
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3399 데이터시트(HTML) 2 Page - Toshiba Semiconductor

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2SK3399
2006-11-08
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V(BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 600 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
5.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
0.54
0.75
Ω
Forward transfer admittance
⎪Yfs
VDS = 10 V, ID = 5 A
2.0
5.2
S
Input capacitance
Ciss
1750
Reverse transfer capacitance
Crss
11
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
170
pF
Rise time
tr
15
Turn-on time
ton
40
Fall time
tf
8
Switching time
Turn-off time
toff
35
ns
Total gate charge
(Gate-source plus gate-drain)
Qg
35
Gate-source charge
Qgs
15
Gate-drain (“Miller”) charge
Qgd
VDD ∼− 400 V, VGS = 10 V, ID = 10 A
20
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
10
A
Pulse drain reverse current
(Note 1)
IDRP
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
1300
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
16
μC
Marking
VIN: tr, tf < 5 ns
Duty <= 1%, tw = 10 μs
0 V
10 V
VGS
RL = 40 Ω
VDD ∼− 200 V
ID = 5 A
VOUT
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3399
Part No. (or abbreviation code)


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