STP8NM50FP datasheet(5/14 Pages) STMICROELECTRONICS

부품명	STP8NM50FP

상세설명	N-channel 550V @ Tjmax - 0.7廓 - 8A - TO-220 - TO-220FP MDmesh??Power MOSFET

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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5 / 14 page

STP8NM50 - STP8NM50FP

Electrical characteristics

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Table 6.

Switching times

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD=250 V, ID=2.5A,

RG=4.7Ω, VGS=10V

(see Figure 15)

16

8

ns

tr(Voff)

tf

tc

Off-voltage rise time

Fall time

Cross-over time

VDD=400 V, ID=5A,

RG=4.7Ω, VGS=10V

(see Figure 15)

14

6

13

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

ISD

ISDM

Source-drain current

Source-drain current (pulsed)

8

32

A

VSD

Forward on voltage

ISD=10A, VGS=0

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=5A, di/dt = 100A/µs,

VDD=100 V, Tj=25°C

(see Figure 20)

185

1.1

11.5

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=5A, di/dt = 100A/µs,

VDD=100 V, Tj=150°C

(see Figure 20)

270

1.6

12

ns

µC

A

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