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TC9WMC1FK 데이터시트(PDF) 5 Page - Toshiba Semiconductor |
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TC9WMC1FK 데이터시트(HTML) 5 Page - Toshiba Semiconductor |
5 / 16 page TC9WMC1FK/FU,TC9WMC2FK/FU 2007-10-19 5 (3.2) Write (WRITE) The Write instruction contains the 16 bits of data to be written into the specified memory location. After the CS is driven High, a start bit is transferred followed by the WRITE instruction, address and 16 bits of data. After the least significant bit (D0) of data is received on the rising edge of SK, a write operation is triggered by the CS being pulled Low. It is not necessary to set every bit in the memory array to “1” before writing data. CS SK 1 2 7 8 9 10 25 1 1 0 DI DO Hi-Z A5 3 4 5 6 A4 A3 A2 A1 A0 D15 D0 Hi-Z Figure 3. Write Timing Diagram (TC9WMC1) Busy Ready Verify tPW CS SK 1 2 7 8 9 10 27 1 1 0 DI DO Hi-Z A5 3 4 5 6 A4 A3 A2 A1 A0 D15 D0 Hi-Z Figure 4. Write Timing Diagram (TC9WMC2) Busy Ready Verify 11 12 A6 x tPW |
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