TLP759F

2007-10-01

1

TOSHIBA Photocoupler GaAℓAs Ired + Photo−IC

TLP759F

Digital Logic Ground Isolation

Line Receiver

Microprocessor System Interfaces

Switching Power Supply Feedback Control

Transistor Inverter

The TOSHIBA TLP759F consists of a GaAℓAs high-output light

emitting diode and a high speed detector of one chip photo diode-

transistor. This unit is 8-lead DIP package.

TLP759F has no internal base connection, and a faraday shield

integrated on the photodetector chip provides an effective common

mode noise transient immunity.

So this is suitable for application in noisy environmental condition.

All parameters are tested to the specification of TLP759.

• Isolation voltage: 5000 Vrms (min.)

• TTL compatible

• UL recognized: UL1577, file no. E67349

• BSI approved:

BS EN60065:2002, certificate no.8869

BS EN60950-1:2002, certificate no.8870

• Option (D4) type

VDE approved: DIN EN 60747-5-2

Certificate no. 40009302

(Note) When an EN 60747-5-2 approved type is

needed, please designate the “ Option (D4) ”

• Creepage distance: 8.0mm

Clearance: 8.0mm

Insulation thickness: 0.4mm

Pin Configuration(top view)

1: N.C.

2: Anode

3: Cathode

4: N.C.

5: Emitter(GND)

6: Collector(output)

7: N.C.

7

8

6

2

1

3

4

5

SHIELD

Schematic

8

6

2

3

5

SHIELD

GND

Unit in mm

TOSHIBA

11−10C402

Weight: 0.54g