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GT30J121 데이터시트(PDF) 5 Page - Toshiba Semiconductor

부품명 GT30J121
상세설명  Silicon N Channel IGBT High Power Switching Applications
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

GT30J121 데이터시트(HTML) 5 Page - Toshiba Semiconductor

  GT30J121_06 Datasheet HTML 1Page - Toshiba Semiconductor GT30J121_06 Datasheet HTML 2Page - Toshiba Semiconductor GT30J121_06 Datasheet HTML 3Page - Toshiba Semiconductor GT30J121_06 Datasheet HTML 4Page - Toshiba Semiconductor GT30J121_06 Datasheet HTML 5Page - Toshiba Semiconductor GT30J121_06 Datasheet HTML 6Page - Toshiba Semiconductor  
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GT30J121
2006-11-01
5
Collector-emitter voltage VCE (V)
C – VCE
Gate charge QG (nC)
VCE, VGE – QG
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector-emitter voltage VCE (V)
Reverse Bias SOA
Pulse width tw (s)
rth (t) – tw
0
40
80
120
160
200
0
100
200
300
400
500
0
4
8
12
16
20
VCE = 100 V
Common emitter
RL = 10 Ω
Tc = 25°C
300
200
Tj ≤ 125°C
VGE = 15 V
RG = 24 Ω
0.1
1
100
1
10
30
3
0.3
3
10
30
300
100
1000
10
−5
10
−4
10
−2
10
−1
10
2
10
−4
10
−3
10
−2
10
−1
10
1
10
2
10
0
10
−3
10
0
10
1
Tc = 25°C
0.1
Common emitter
VGE = 0
f = 1 MHz
Tc = 25°C
10000
10
100
300
1000
30
3000
10
100
1000
30
0.3
1
3
Cies
Coes
Cres
300
*: Single pulse
Tc
= 25°C
Curves must be
derated linearly
with increase in
temperature.
100 μs*
50 μs*
1 ms*
10 ms*
DC operation
IC max (continuous)
IC max (pulsed)*
1
10
30
3
0.3
3
10
30
300
100
0.1
1
100
1000


유사한 부품 번호 - GT30J121_06

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유사한 설명 - GT30J121_06

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