전자부품 데이터시트 검색엔진 |
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2SA1202 데이터시트(PDF) 3 Page - Toshiba Semiconductor |
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2SA1202 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SA1202 2006-11-09 3 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE Safe Operating Area hFE – IC Collector current IC (mA) VCE (sat) – IC Ambient temperature Ta (°C) PC – Ta 0 −8 −4 −2 0 −200 −400 Common emitter Ta = 25°C −300 −6 −100 −10 IB = −0.5 mA 0 −5 −3 −2 −1 −12 Common emitter VCE = −2 V −1 300 −10 −300 −3 50 10 −30 −100 100 500 Ta = 100°C 25 −25 30 −1 −0.5 −10 −300 −3 −0.1 −0.01 −30 −100 −0.3 −1 Ta = 100°C 25 −25 −0.03 Common emitter IC/IB = 10 −0.05 0 −0.8 −0.4 −0.2 0 −200 −400 Common emitter VCE = −2 V −300 −0.6 −100 −1.0 −1.2 Ta = 100°C 25 −25 0 0 0.6 0.2 0.8 0.4 1.2 1.0 120 80 100 40 60 20 140 160 (1) Mounted on a ceramic substrate (250 mm 2 × 0.8 t) (2) No heat sink (1) (2) *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. −0.5 −1 −10 −1 −100 −300 −3 −30 −10 −100 −5 −50 IC max (pulse)* IC max (continuous) 100 ms* 1 ms* 10 ms* VCEO max −30 −3 −300 −2000 −1000 −500 DC operation Ta = 25°C |
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