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TLP651 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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TLP651 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TLP651 2007-10-01 2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current (Note 1) IF 25 mA Pulse forward current (Note 2) IFP 50 mA Peak transient forward current (Note 3) IFPT 1 A Reverse voltage VR 5 V Diode power dissipation (Note 4) PD 45 mW Output current IO 8 mA Peak output current IOP 16 mA Output voltage VO −0.5~15 V Supply voltage VCC −0.5~15 V Base current IB 5 mA Emitter −base reverse voltage VEB 5 V Output power dissipation (Note 5) PO 100 mW Operating temperature range Topr −55~100 °C Storage temperature range Tstg −55~125 °C Lead solder temperature (10s) (Note 6) Tsol 260 °C Isolation voltage (AC, 1min., R.H.≤ 60%) (Note 7) BVS 5000 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Derate 0.8mA above 70°C. (Note 2) 50% duty cycle,1ms pulse width. Derate 1.6mA / °C above 70°C. (Note 3) Pulse width ≤ 1μs, 300pps. (Note 4) Derate 0.9mW / °C above 70°C. (Note 5) Derate 2mW / °C above 70°C. (Note 6) Soldering portion of lead: Up to 2mm from the body of the device. (Note 7) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. |
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