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2SA1358 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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2SA1358 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SA1358 2006-11-09 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1358 Audio Frequency Power Amplifier Applications • Complementary to 2SC3421 • Suitable for driver of 60 to 80 watts • High breakdown voltage Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current IC −1 A Base current IB −100 mA Ta = 25°C 1.5 Collector power dissipation Tc = 25°C PC 10 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8H1A Weight: 0.82 g (typ.) |
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